- 您現在的位置：買賣IC網 > PDF目錄385106 > B80C800DM (GE Security, Inc.) INDUCTOR SMD 1UH DN10102CT PDF資料下載
參數資料
| 型號： | B80C800DM |
| 廠商： | GE Security, Inc. |
| 英文描述： | INDUCTOR SMD 1UH DN10102CT |
| 中文描述： | 微型玻璃鈍化單相橋式整流器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 45K |
| 代理商： | B80C800DM |
B40C800 – B500C800
1 of 3 2002 Won-Top Electronics
B40C800 – B500C800
0.8A BRIDGE RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop A
!
High Current Capability
!
High Reliability
!
High Surge Current Capability B
!
Ideal for Printed Circuit Boards
+ ~ ~ -
C D
Mechanical Data
!
Case: Molded Plastic E
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ~
!
Polarity: As Marked on Body
!
Weight: 1.1 grams (approx.) -
!
Mounting Position: Any +
!
Marking: Type Number G
G
~
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B40C
800
B80C
800
B125C
800
B250C
800
B380C
800
B500C
800
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
200
300
600
900
1200
V
Input Voltage Recommended
V
R(RMS)
40
80
125
250
380
500
V
Average Rectified Output Current (Note 1) @T
A
= 50°C
I
O
0.8
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
45
A
Forward Voltage (per element) @I
F
= 0.8A
V
FM
1.0
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
500
μA
Operating Temperature Range
T
j
-55 to +125
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
W TE
POWER SEMICONDUCTORS
WOB
Min
8.60
5.0
27.9
25.4
0.71
4.60
Dim
A
B
C
D
E
G
Max
9.10
5.50
—
—
0.81
5.60
All Dimensions in mm
相關PDF資料 |
PDF描述 |
|---|---|
| B80C800G | GLASS PASSIVATED SINGLE - PHASE BRIDGE RECTIFIER |
| B80D | Silicon-Bridge Rectifiers |
| B80FD | Fast Switching Si-Bridge Rectifiers |
| B80FS | Fast Switching Surface Mount Si-Bridge Rectifiers |
| B80R | Silicon-Bridge Rectifiers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| B80C800DM-E3/45 | 功能描述:橋式整流器 0.9 Amp 125 Volt RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| B80C800G | 制造商:Vishay Semiconductors 功能描述:0.9 A, 125 V, SILICON, BRIDGE RECTIFIER DIODE |
| B80C800G-E4/51 | 功能描述:橋式整流器 0.9 Amp 125 Volt RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| B80C800GL-7001/1 | 制造商:Vishay Semiconductors 功能描述:.8A, 125V, GLASS, RD BRIDGE; BULK-PACK,TRAY,BOX - Trays |
| B80C800GL-801E4/51 | 功能描述:橋式整流器 0.9 Amp 125 Volt RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。