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參數資料
| 型號： | b9s |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 0.5A的表面貼裝玻璃鈍化整流橋 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | B9S |
B1S – B10S
1 of 4 2006 Won-Top Electronics
Pb
B1S – B10S
0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction G
!
Low Forward Voltage Drop
!
High Current Capability
!
High Surge Current Capability
- +
H
!
Designed for Surface Mount Application B
~ ~
D E
!
Plastic Material – UL Flammability 94V-O
!
Recognized File # E157705 C
A
L
Mechanical Data
J
!
Case: MB-S, Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 K
!
Polarity: As Marked on Case
!
Weight: 0.22 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B1S
B2S
B4S
B6S
B8S
B10S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
70
140
280
420
560
700
V
Average Rectified Output Current (Note 1) @T
A
= 40°C
Average Rectified Output Current (Note 2) @T
A
= 40°C
I
O
0.5
0.8
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
I
2
t Rating for Fusing (t < 8.3ms)
I
2
t
5.0
A
2
s
Forward Voltage per element @I
F
= 0.5A
V
FM
1.0
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
RM
5.0
500
μA
Typical Junction Capacitance per leg (Note 3)
C
j
25
pF
Typical Thermal Resistance per leg (Note 1)
R
R
JA
JL
85
20
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm
2
solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
MB-S
Min
4.50
3.80
0.15
—
—
0.70
1.30
2.30
2.30
—
Dim
A
B
C
D
E
G
H
J
K
L
Max
4.90
4.20
0.35
0.20
7.00
1.10
1.70
2.70
2.70
3.00
All Dimensions in mm
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