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參數資料
| 型號： | BA159DG |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | FAST GPP DIODES |
| 中文描述： | 快速玻璃鈍化二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 84K |
| 代理商： | BA159DG |
BA157GP THRU BA159GP
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage -
400 to 1000 Volts
Forward Current -
1.0 Ampere
FEATURES
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
For use in high frequency rectifier circuits
Fast switching for high efficiency
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 Ampere operation at T
A
=55°C with no thermal
runaway
Typical I
R
less than 0.1
μ
A
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce,0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BA157GP
BA158GP
BA159DGP
BA159GP
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current
10ms single half sine-wave superimposed
on rated load at T
A
=25°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage T
A
=25°C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
I
(AV)
1.0
Amp
I
FSM
20.0
Amps
V
F
1.3
Volts
I
R
5.0
μ
A
t
rr
C
J
R
Θ
JA
T
J
, T
STG
150
250
500
500
ns
pF
15.0
55.0
°C/W
°C
-65 to +175
NOTES
:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
NOTE:
Lead diameter is for suffix "E" part numbers
DO-204AL
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
PATENTED*
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PDF描述 |
|---|---|
| BA159G | FAST GPP DIODES |
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| BA159 | FAST SWITCHING PLASTIC RECTIFIER |
| BA159 | 1.0A FAST RECOVERY RECTIFIER |
| BA159-T3 | 50/125 PVC MTRJ-MTRJ 2DUPLEX ASSEM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BA159DGP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Junction Fast Switching Rectifier |
| BA159DGP/23 | 功能描述:二極管 - 通用，功率，開關 800 Volt 1.0A 500ns Glass Passivated RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA159DGP/54 | 功能描述:二極管 - 通用，功率，開關 1.0 Amp 800 Volt RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA159DGP-E3/23 | 功能描述:二極管 - 通用，功率，開關 1.0 Amp 800 Volt RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA159DGP-E3/54 | 功能描述:二極管 - 通用，功率，開關 1.0 Amp 800 Volt RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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