- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385110 > BA783S-V-GS18 (VISHAY SEMICONDUCTORS) DIODE SILICON, VHF-UHF BAND, MIXER DIODE, ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | BA783S-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE SILICON, VHF-UHF BAND, MIXER DIODE, ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode |
| 中文描述： | PIN Diodes 35 Volt 100mA Band |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 72K |
| 代理商： | BA783S-V-GS18 |
BA782S, BA783S
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 25-Feb-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85709
Band Switching Diodes
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode switches
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of
compliance please see
www.vishay.com/doc99912
DESCRIPTION
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
PARTS TABLE
PART
ORDERING CODE
BA782S-E3-08 or BA782S-E3-18
BA782S-HE3-08 or BA782S-HE3-18
BA783S-E3-08 or BA783S-E3-18
BA783S-HE3-08 or BA783S-HE3-18
TYPE MARKING
REMARKS
BA782S
R2
Tape and reel
BA783S
R3
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Reverse voltage
Forward continuous current
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Junction temperature
Storage temperature range
Operating temperature range
SYMBOL
T
j
T
stg
T
op
VALUE
125
- 55 to + 150
- 55 to + 125
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 100 mA
Reverse current
V
R
= 20 V
f = 1 MHz, V
R
= 1 V
PART
SYMBOL
V
F
I
R
C
D1
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
L
S
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
nH
Diode capacitance
f = 1 MHz, V
R
= 3 V
BA782S
BA783S
BA782S
BA783S
BA782S
BA783S
Dynamic forward resistance
f = (50 to 1000) MHz, I
F
= 3 mA
f = (50 to 1000) MHz, I
F
= 10 mA
Series inductance across case
2.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BA891 | Band-switching diode |
| BA891 | Band-switching diode |
| BA891 | Band-switching diode |
| BA892V-04W | Band Switching Diodes - Dual, Series in SOT-323 |
| BA892V-04W-GS08 | Band Switching Diodes - Dual, Series in SOT-323 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BA783-V | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Band Switching Diodes |
| BA783-V-GS08 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 35 Volt 100mA Band RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA783-V-GS18 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 35 Volt 100mA Band RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA78M05 | 制造商:ROHM 制造商全稱:Rohm 功能描述:1A Output 78 series Regulators 500mA Output 78 series Regulators |
| BA78M05CP | 制造商:ROHM 制造商全稱:Rohm 功能描述:Three-Terminal Regulator |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。