
LESHAN RADIO COMPANY, LTD.
S25–1/2
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
Silicon PIN diode
SOD523 SC-79
1
2
BAP63 – 03
2
ANODE
1
CATHODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
50
100
500
+150
+150
UNIT
V
mA
mW
°C
°C
I
T
s
<
90°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=50 mA
V
R
=35 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
TYP.
0.95
–
0.4
0.35
0.27
2.5
1.95
1.17
0.9
15.4
10.1
7.8
0.21
0.28
0.38
0.18
0.26
0.35
0.13
0.20
0.30
0.10
0.18
0.28
MAX.
1.1
10
–
–
0.32
3.5
3
1.8
1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
r
D
diode forward resistance
|s
21
|
2
isolation
|s
21
|
2
insertion loss
|s
21
|
2
insertion loss
|s
21
|
2
insertion loss
|s
21
|
2
insertion loss