- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385112 > BAQ334-TR3 (VISHAY SEMICONDUCTORS) SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel PDF資料下載
參數(shù)資料
| 型號(hào)： | BAQ334-TR3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel |
| 中文描述： | Diodes (General Purpose, Power, Switching) 60 Volt 200mA 2.0 Amp IFSM |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | BAQ334-TR3 |
BAQ333, BAQ334, BAQ335
Vishay Semiconductors
www.vishay.com
Rev. 2.1, 01-Aug-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85538
Small Signal Switching Diodes, Low Leakage Current
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Silicon planar diodes
Saving space
Hermetic sealed parts
Fits onto SOD-323/SOT-23 footprints
Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
Very low reverse current
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART
TYPE DIFFERENTIATION
ORDERING CODE
INTERNAL CONSTRUCTION
REMARKS
BAQ333
V
RRM
= 40 V
BAQ333-TR3 or BAQ333-TR
Single diode
Tape and reel
BAQ334
V
RRM
= 70 V
BAQ334-TR3 or BAQ334-TR
Single diode
Tape and reel
BAQ335
V
RRM
= 140 V
BAQ335-TR3 or BAQ335-TR
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
BAQ333
V
RRM
40
V
BAQ334
V
RRM
70
V
BAQ335
V
RRM
140
V
Reverse voltage
BAQ333
V
R
30
V
BAQ334
V
R
60
V
BAQ335
V
R
125
V
Peak forward surge current
t
p
= 1 μs
I
FSM
2
A
Forward continuous current
I
F
200
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, fig. 3
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500
K/W
Junction temperature
T
j
175
°C
Storage temperature range
T
stg
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAQ333-TR | Diode Small Signal Switching 30V 0.2A 2-Pin MicroMELF T/R |
| BAQ333-TR3 | SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel |
| BAR63V-03W-GS08 | DIODE SILICON, PIN DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3, PIN Diode |
| BAR63V-04W | RF PIN Diodes - Dual, Series in SOT-323 |
| BAR63V-04W-GS08 | RF PIN Diodes - Dual, Series in SOT-323 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAQ335 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, Low Leakage Current |
| BAQ335-TR | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 125 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAQ335-TR3 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 125 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAQ33B | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, Low Leakage Current |
| BAQ33-GS08 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 40 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。