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參數資料
| 型號： | BAS19-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 中文描述： | 0.2 A, 120 V, SILICON, SIGNAL DIODE |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 359K |
| 代理商： | BAS19-7-F |
Lead-free
DS12004 Rev. 18 - 2
1 of 3
BAS19 / BAS20 / BAS21
www.diodes.com
Diodes Incorporated
BAS19 / BAS20 / BAS21
SURFACE MOUNT FAST SWITCHING DIODE
Features
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Polarity: See Diagram
BAS19 Marking: KA8, KT3, KT2 (See Page 3)
BAS20 Marking: KT2, KT3 (See Page 3)
BAS21 Marking: KT3 (See Page 3)
Weight: 0.008 grams (approximate)
·
·
·
·
·
·
·
·
·
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
BAS19
120
BAS20
200
BAS21
250
Unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
100
150
200
V
71
106
400
200
141
V
mA
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
m
s
@ t = 1.0s
I
FSM
2.5
0.5
A
Repetitive Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
I
FRM
P
d
R
q
JA
T
j
, T
STG
625
250
mA
mW
Thermal Resistance Junction to Ambient Air (Note 1)
500
°
C/W
Operating and Storage Temperature Range
-65 to +150
°
C
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Note:
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
Characteristic
Symbol
Min
120
200
250
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2) BAS19
BAS20
BAS21
V
(BR)R
V
I
R
= 100
m
A
Forward Voltage
V
F
1.0
1.25
V
I
F
= 100mA
I
F
= 200mA
Reverse Current @ Rated DC Blocking Voltage (Note 2)
I
R
100
15
nA
m
A
T
j
= 25
°
C
T
j
= 100
°
C
V
R
= 0, f = 1.0MHz
I
F
= I
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100
W
Total Capacitance
C
T
5.0
pF
Reverse Recovery Time
t
rr
50
ns
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
·
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
·
·
·
·
·
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
a
0
°
8
°
All Dimensions in mm
相關PDF資料 |
PDF描述 |
|---|---|
| BAS20-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
| BAS21-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
| BAS19W-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
| BAS20W-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
| BAS21W-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
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| BAS19-AU | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES Fast switching speed |
| BAS19-E3-08 | 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Bulk 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
| BAS19-E3-18 | 制造商:Vishay Siliconix 功能描述:BAS19-E3-18 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAS19-E3-18 - Bulk 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
| BAS19E6327 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 120V 0.25A 3-Pin SOT-23 T/R |
| BAS19E-6327 | 制造商:NA 功能描述:19E-6327 |
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