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參數(shù)資料
| 型號(hào)： | BAS385-TR3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY DIODE MICROMELF-E2 - Tape and Reel |
| 中文描述： | Schottky (Diodes & Rectifiers) 30 Volt 200mA 300mA IFSM |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 75K |
| 代理商： | BAS385-TR3 |
BAS385
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 09-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85504
Small Signal Schottky Diode
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Integrated
discharge
Very low forward voltage
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
protection
ring
against
static
APPLICATIONS
Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS385
TYPE DIFFERENTATION
V
R
= 30 V
ORDERING CODE
BAS385-TR3 or BAS385-TR
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
30
5
300
200
200
UNIT
V
A
mA
mA
mA
t
p
= 10 ms
t
p
1 s
V
RWM
= 25 V
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Junction to ambient air
R
thJA
320
K/W
Junction temperature
Storage temperature range
T
j
125
°C
°C
T
stg
- 65 to + 150
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 25 V, t
p
= 300 μs
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
240
320
400
500
800
2.3
10
UNIT
mV
mV
mV
mV
mV
μA
pF
Forward voltage
Reserve current
Diode capacitance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS386-TR | Small Signal Schottky Diode |
| BAS386-TR3 | Small Signal Schottky Diode |
| BAS386-TR | Diode Small Signal Schottky 50V 0.2A 2-Pin MicroMELF T/R |
| BAS386-TR3 | SCHOTTKY DIODE MICROMELF-E2 - Tape and Reel |
| BAS386 | Schottky Barrier Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS386 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 0.2A 制造商:Vishay Semiconductors 功能描述:DIODE, SCHOTTKY, 0.2A |
| BAS386_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Schottky Diode |
| BAS386_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Schottky Diode |
| BAS386_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Schottky Diode |
| BAS386-TR | 功能描述:肖特基二極管與整流器 60 Volt 200mA 500mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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