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參數(shù)資料
| 型號(hào)： | BAS70-04-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 250K |
| 代理商： | BAS70-04-7-F |
BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and ESD
Protection
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method
208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
α
0.085
0.180
0
°
8
°
All Dimensions in mm
BAS70 Marking: K73, K7C
Maximum Ratings
@T
A
= 25°C unless otherwise specified
BAS70-04 Marking: K74, K7D
BAS70-05 Marking: K75, K7E
BAS70-06 Marking: K76, K7F
Top View
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
θ
JA
T
j
T
STG
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t
≤
1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
70
V
49
70
100
200
625
V
mA
mA
mW
°C/W
°
C
°C
-55 to +125
-65 to +150
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
(BR)R
Min
70
Max
—
410
1000
100
2.0
Unit
V
Test Condition
Reverse Breakdown Voltage (Note 2)
I
R
= 10μA
t
p
<300μs, I
F
= 1.0mA
t
p
<300μs, I
F
= 15mA
t
p
<300μs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100
Ω
Forward Voltage
V
F
—
mV
Reverse Current (Note 2)
Total Capacitance
I
R
C
T
nA
pF
Reverse Recovery Time
t
rr
—
5.0
ns
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS11007 Rev. 19 - 2
1 of 3
www.diodes.com
BAS70/ -04/ -05/ -06
Diodes Incorporated
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