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參數資料
| 型號： | BAS70WS-T1 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面貼裝肖特基勢壘二極管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 40K |
| 代理商： | BAS70WS-T1 |
BAS40WS
1 of 3 2006 Won-Top Electronics
Pb
BAS40WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
Low Turn-on Voltage
!
Fast Switching A
!
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application C
!
Plastic Material – UL Recognition Flammability D
Classification 94V-O B
E
Mechanical Data
!
Case: SOD-323, Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.004 grams (approx.)
!
Marking: S40 H
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 3
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
BAS40WS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
Forward Continuous Current (Note 1)
I
F
200
mA
Forward Surge Current @ t < 1.0s
I
FSM
600
mA
Power Dissipation (Note 1)
P
d
200
mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +125
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V
(BR)R
40
—
—
V
@ I
R
= 10μA
Forward Voltage
V
F
—
—
380
500
1000
mV
@ I
F
= 1.0mA, t < 300μs
@ I
F
= 10mA, t < 300μs
@ I
F
= 40mA, t < 300μs
Reverse Leakage Current
I
R
—
20
200
nA
@ V
R
= 30V, t < 300μs
Junction Capacitance
C
j
—
4.0
5.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
—
—
5.0
nS
I
F
= 10mA through I
R
= 10mA to
I
R
= 1.0mA, R
L
= 100
Note: 1. Device on fiberglass substrate.
WTE
POWER SEMICONDUCTORS
SOD-323
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Dim
A
B
C
D
E
G
H
All Dimensions in mm
Max
2.70
1.95
1.35
0.35
0.15
0.95
—
G
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