- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385117 > BAS86-GS18 (VISHAY SEMICONDUCTORS) Diode Small Signal Schottky 50V 0.2A 2-Pin Mini-MELF SOD-80 T/R PDF資料下載
參數(shù)資料
| 型號： | BAS86-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Schottky 50V 0.2A 2-Pin Mini-MELF SOD-80 T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 50 Volt 200mA 500 mA IFRM |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 77K |
| 代理商： | BAS86-GS18 |
BAS86
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Jan-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85511
Small Signal Schottky Diode
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
For general purpose applications
This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low
logic level applications
This diode is also available in a DO-35 case with type
designation BAT86
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Applications where a very low forward voltage is required
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART
BAS86
ORDERING CODE
BAS86-GS18 or BAS86-GS08
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Continuous reserve voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Power dissipation
(1)
SYMBOL
V
R
I
F
I
FRM
P
tot
VALUE
50
200
500
200
UNIT
V
mA
mA
mW
t
p
< 1 s,
0.5
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Ambient operating temperature range
Storage temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
amb
T
stg
VALUE
300
125
- 65 to + 125
- 65 to + 150
UNIT
K/W
°C
°C
°C
相關PDF資料 |
PDF描述 |
|---|---|
| BAS86 | Schottky Diodes(肖特基二極管) |
| BAT1000-7-F | 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| BAT1000 | 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| BAT1000-7 | 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| BAT120A | Schottky barrier double diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BAS86-M | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Schottky Diode |
| BAS86-M-08 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY DIODES SOD80 MINIMELF-E2-M |
| BAS86-M-18 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY DIODES SOD80 MINIMELF-E2-M |
| BAS86T/R | 制造商:NXP Semiconductors 功能描述:Diode Schottky 50V 0.2A 2-Pin Mini-MELF T/R |
| BAS-A1-6 | 制造商:NORDEX 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。