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參數(shù)資料
| 型號(hào)： | BAT29 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Small Signal Schottky Diode(小信號(hào)肖特基二極管) |
| 中文描述： | 小信號(hào)肖特基二極管（小信號(hào)肖特基二極管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 61K |
| 代理商： | BAT29 |
BAT 29
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode primarly intended for
UHF mixers and ultrafast switching applications.
ABSOLUTE RATINGS
(limiting values)
November 1994
DO 35
(Glass)
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Parameter
Value
5
30
60
Unit
V
mA
mA
°
C
°
C
°
C
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
T
a
= 25
°
C
t
p
≤
1s
- 65 to +150
-65 to +125
230
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Symbol
R
th(j-a)
Test Conditions
Value
400
Unit
°
C/W
Junction-ambient*
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
(1) Pulse test: t
≤
300
μ
s
δ
<
2%
.
(2) Measured on B-line Electronics QS-3 stored charge meter.
(3) Noise figure test :
- diode is inserted in a tuned stripline circuit
- local oscillator frequency 1GHz
- local oscillator power 1mW
- intermediate frequency amplifier, tuned on 30MHz, has a noise figure 1.5dB
Symbol
V
BR
V
F
(1)
I
R
(1)
Test Conditions
I
R
= 100
μ
A
I
F
= 10mA
V
R
= 1V
Min.
5
Typ.
Max.
Unit
V
V
μ
A
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
0.55
0.05
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
QS (2)
F (3)
Test Conditions
V
R
= 0V
I
F
= 10mA
f = 1GHz
Min.
Typ.
Max.
1
3
7
Unit
pF
pC
dB
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
f = 1MHz
6
DYNAMIC CHARACTERISTICS
1/3
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