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參數資料
| 型號： | BAT6404WQ62702A1160 |
| 英文描述： | 4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores |
| 中文描述： | 011DE肖特基雙的SOT - 323 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 69K |
| 代理商： | BAT6404WQ62702A1160 |
BAT 64...W
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
1
3
VSO05561
2
BAT 64-05W
BAT 64-06W
BAT 64-04W
BAT 64W
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
Marking Ordering Code
63s
64s
65s
66s
Q62702-A1162
Pin Configuration
1 = A
1 = A1
1 = A1
1 = C1
Package
SOT-323
Q62702-A1159
Q62702-A1160
Q62702-A1161
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current (t
<
100
μ
s)
Total power dissipation BAT 64W, T
S
≤
120°C
P
tot
Total power dissipat. BAT64-04/06W,
T
S
≤
111°C
Total power dissipation BAR 64-05W,
T
S
≤
104°C
Junction temperature
Storage temperature
Symbol
Value
40
250
120
800
250
250
250
150
-55...+150
Unit
V
mA
V
R
I
F
I
FAV
I
FSM
mW
P
tot
P
tot
T
j
T
stg
°C
1
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