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參數(shù)資料
| 型號(hào)： | BAV21WS-V-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Small Signal Switching Diodes, High Voltage |
| 中文描述： | Diodes (General Purpose, Power, Switching) 200V 625mA 1A IFSM |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 82K |
| 代理商： | BAV21WS-V-GS08 |
BAV19WS-G, BAV20WS-G, BAV21WS-G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 02-Jul-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 83423
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diodes
For general purpose
AEC-Q101 qualified
Base P/N-G3 - green, commercial grade
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
Note
(1)
Valid provided that leads are kept at ambient temperature
Note
(1)
Valid provided that leads are kept at ambient temperature
PARTS TABLE
PART
TYPE
DIFFERENTIATION
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
BAV19WS-G
BAV20WS-G
BAV21WS-G
BAV19WS-G3-08 or BAV19WS-G3-18
BAV20WS-G3-08 or BAV20WS-G3-18
BAV21WS-G3-08 or BAV21WS-G3-18
AS
AT
AU
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
BAV19WS-G
BAV20WS-G
BAV21WS-G
BAV19WS-G
BAV20WS-G
BAV21WS-G
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
VALUE
100
150
200
120
200
250
250
UNIT
V
V
V
V
V
V
mA
Continuous reverse voltage
Repetitive peak reverse voltage
Forward continuous current
(1)
Rectified current (average) half wave
recitification with resistive load
(1)
Repetitive peak forward current
(1)
Surge forward current
Power dissipation
(1)
I
F(AV)
200
mA
f
50 Hz,
= 180 °C
t < 1 s, T
J
= 25 °C
I
FRM
I
FSM
P
tot
625
1
200
mA
A
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
(1)
Storage temperature range
(1)
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
650
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAV21W-V-GS08 | Diode Small Signal Switching 250V 0.25A 2-Pin SOD-123 T/R |
| BAV21W-V-GS18 | Diode Small Signal Switching 250V 0.25A 2-Pin SOD-123 T/R |
| BAV20WS-V-GS18 | BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Small Signal Switching Diodes, High Voltage |
| BAV21WS-V-GS18 | Diode Small Signal Switching 250V 0.25A 2-Pin SOD-323 T/R |
| BAV20WS-V-GS08 | Diode Small Signal Switching 200V 0.25A 2-Pin SOD-323 T/R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAV21WS-V-GS18 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 200V 625mA 1A IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV21WT | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 200mA 250V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV21W-T1 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| BAV21W-T3 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| BAV21W-TP | 功能描述:整流器 200mA 250V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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