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參數(shù)資料
| 型號： | BAV70W |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Dual Series Switching Diode - Silicon epitaxial planar type |
| 中文描述： | 雙系列開關(guān)二極管-硅外延平面型 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | BAV70W |
DS30063 Rev. 2 - 1
1 of 3
BAV70W
BAV70W
DUAL SURFACE MOUNT SWITCHING DIODE
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: KJA
Weight: 0.006 grams (approx.)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
Features
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.25
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Characteristic
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
BAV70W
100
Unit
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
75
V
53
300
150
2.0
1.0
200
625
V
mA
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
@ t = 1.0s
I
FSM
A
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
P
d
R
JA
T
j
, T
STG
mW
C/W
C
-65 to +150
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
BR(R)
Min
75
Max
Unit
V
Test Condition
I
R
= 100 A
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150 C
V
R
= 25V, T
j
= 150 C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
V
FM
0.715
0.855
1.0
1.25
V
Peak Reverse Current (Note 1)
I
RM
2.5
50
30
25
2.0
A
A
A
nA
pF
Junction Capacitance
C
j
Reverse Recovery Time
t
rr
4.0
ns
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
N
Note:
1. Short duration test pulse used to minimize self-heating effect.
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