- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385122 > BAV756DW (Diodes Inc.) QUAD SURFACE MOUNT SWITCHING DIODE ARRAY PDF資料下載
參數(shù)資料
| 型號： | BAV756DW |
| 廠商： | Diodes Inc. |
| 英文描述： | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| 中文描述： | 四表面貼裝開關(guān)二極管陣列 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | BAV756DW |
DS30148 Rev. B-1
1 of 2
BAV756DW
BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: KCA
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
F
D
B C
H
K
C
1
A
2
A
1
A
1
C
2
C
2
KXX
C
1
A
1
C
2
A
1
C
2
A
2
Features
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.80
2.20
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
One BAV70 Circuit and One BAW56 Circuit In
One Package
Easily Connected As F.W. Bridge
Characteristic
Symbol
BAV756DW
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
RMS Reverse Voltage
V
R(RMS)
53
V
Forward Continuous Current (Note 1)
I
FM
300
mA
Average Rectified Output Current (Note 1)
I
O
150
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
@ t = 1.0s
I
FSM
2.0
1.0
A
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
JA
625
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Maximum Forward Voltage
V
FM
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150 C
V
R
= 25V, T
j
= 150 C
V
R
= 20V
V
R
= 0, f = 1.0MHz
Maximum Peak Reverse Current
I
RM
2.5
50
30
25
A
A
A
nA
Junction Capacitance
C
j
2.0
pF
Reverse Recovery Time
t
rr
4.0
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Marking
Indicates
Orientation
N
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAV99DW | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAV99DW-7 | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAV99WT | 200mW 75Volt Plastic-Encapsulate Diode |
| BAW101 | Dual, Isolated High Voltage Switching Diodes(雙路,隔離高壓開關(guān)二極管) |
| BAW101 | High voltage double diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAV756DW_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAV756DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAV756DW-7 | 功能描述:二極管 - 通用，功率，開關(guān) 75V 200mW RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV756DW-7-F | 功能描述:二極管 - 通用，功率，開關(guān) 75V 200mW RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV756S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High-speed switching diode array |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。