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參數資料
| 型號： | BAY80-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 150 Volt 100mA 1.0 Amp IFSM |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | BAY80-TR |
BAY80
Document Number 85553
Rev. 1.9, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Switching Diode, High Voltage
Features
Silicon Epitaxial Planar Diode
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
General purpose
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
BAY80
BAY80-TR or BAY80-TAP
BAY80
Tape and Reel/Ammopack
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
Value
150
Unit
V
Reverse voltage
120
V
Peak forward surge current
t
p
= 1 μs
1
A
Repetitive peak forward current
625
mA
Forward continuous current
250
mA
Average forward current
200
mA
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction to ambient air
+ 175
°C
Storage temperature range
- 65 to + 175
°C
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