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參數(shù)資料
| 型號(hào)： | BC347-TO-92 |
| 廠(chǎng)商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR (NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 325K |
| 代理商： | BC347-TO-92 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC347
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM
: 0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
V
(BR)CB
O
V
(BR)CE
O
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Ic= 100
A
I
E
=0
50
V
Collector-emitter breakdown voltage
I
C
= 1mA , I
B
=0
45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=50V, I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=35V, I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3V, I
C
=0
0.1
A
DC current gain
h
FE
V
CE
=5 V, I
C
= 2mA
40
450
Collector-emitter saturation voltage
V
CEsat
I
C
= 10mA, I
B
= 1mA
0.3
V
Base-emitter saturation voltage
V
BEsat
I
C
= 10mA, I
B
= 1mA
1
V
Transition frequency
f
T
V
CE
=5V,I
C
=10mA, f=30MHz
125
MHz
TO
1
2
3
92
1.EMITTER
2. BASE
3. COLLECTOR
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