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參數資料
| 型號： | BC847S |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數： | 1/2頁 |
| 文件大小： | 73K |
| 代理商： | BC847S |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
12
1
2
3
Type
Code
2
±
2
±0.1
0.9
±0.1
1
±
4
6
5
6.5
6.5
2.4
BC846S ... BC848S
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflchenmontage
NPN
Version 2004-04-09
Dimensions / Mae in mm
Power dissipation – Verlustleistung
310 mW
Plastic case
Kunststoffgehuse
SOT-363
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
6 = C1
1 = E1
5 = B2
2 = B1
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte
(T
A
= 25
/
C)
BC847S
45 V
50 V
6 V
310 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65…+ 150
/
C
BC846S
65 V
80 V
BC848S
30 V
30 V
5 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
Characteristics (T
j
= 25
/
C)
DC current gain – Kollektor-Basis-Stromverhltnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
Kennwerte (T
j
= 25
/
C)
h
FE
h
FE
typ. 90 ... 270
110 ... 800
h
fe
typ. 220 ... 600
h
ie
h
oe
1.6 ... 15 k
S
18 ...110
:
S
h
re
typ.1.5 ... 3 *10
-4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BC847S_Q | 功能描述:兩極晶體管 - BJT NPN GP AMP SC70-6 ROHS NON-COMPLIANT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847SE6327 | 制造商:Infineon Technologies AG 功能描述: |
| BC847SE6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 45V 0.1A 6-Pin SOT-363 T/R 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN AF 45V SOT-363 |
| BC847SE6327T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 45V 0.1A 6-Pin SOT-363 T/R |
| BC847SE6433 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述: |
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