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參數資料
| 型號： | BC848A-1JZ |
| 廠商： | Zetex Semiconductor |
| 英文描述： | SOT23 NPN SILICON PLANAR |
| 中文描述： | 采用SOT23 NPN硅平面 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 89K |
| 代理商： | BC848A-1JZ |
BC848BW / BC848B / BC848C
Transistors
1/5
NPN General Purpose Transistor
BC848BW / BC848B / BC848C
!
Features
1) BV
CEO
minimum is 30V (I
C
=
1mA)
2) Complements the BC858B / BC858BW.
!
Absolute maximum ratings
(Ta=25
°
C)
!
External dimensions
(Units : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
BC848B, BC848C
0~0.1
(2)
(1)
(3)
0
2
±
0
1
±
0
0.9
±
0.1
0.2
0.7
±
0.1
0.15
±
0.05
0.3
2.0
±
0.2
1.3
±
0.1
0.65 0.65
+
0.1
0
All terminals have same dimensions
All terminals have same dimensions
0~0.1
0.2Min.
2
±
0
1
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
+
0.1
(2)
(1)
(3)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
30
5
0.1
0.2
0.35
150
55~
+
150
Unit
V
V
V
A
P
C
W
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
When mounted on a 7
×
5
×
0.6mm ceramic board.
Collector power dissipation
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Conditions
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
30V
V
CB
=
30V, Ta
=
150
°
C
I
C
/I
B
=
10mA/0.5mA
I
C
/I
B
=
100mA/5mA
V
CE
/I
C
=
5V/10mA
V
CE
/I
C
=
5V/2mA
V
CE
/I
C
=
5V/2mA
V
CE
=
5V, I
E
=
20mA, f
=
100MHz
V
CB
=
10V, I
E
=
0, f
=
1MHz
V
EB
=
0.5V, I
E
=
0, f
=
1MHz
Typ.
200
3
8
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE(on)
V
CE(sat)
f
T
Cob
Cib
h
FE
Min.
30
30
5
0.58
200
420
Max.
15
5
0.25
0.77
450
0.6
800
Unit
V
V
V
μ
A
V
V
MHz
pF
pF
(SPEC-C22)
(BC848B/BW)
(BC848C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
DC current transfer ratio
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