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參數資料
| 型號： | BC856BDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors(PNP Duals) |
| 中文描述： | 雙通用晶體管（民進黨對偶） |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 164K |
| 代理商： | BC856BDW1T1 |
LESHAN RADIO COMPANY, LTD.
BC856b–1/5
1
3
2
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V
CEO
–65
–45
–30
V
Collector–Base Voltage
V
CBO
–80
–50
–30
V
Emitter–Base Voltage
V
EBO
–5.0
–5.0
–5.0
V
Collector Current
-
Continuous
I
C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
Unit
mW
mW
3.0
328
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ORDERING INFORMATION
Device
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
1
3
2
6
4
5
See Table
Q
1
Q
2
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
相關PDF資料 |
PDF描述 |
|---|---|
| BC857CDW1T1 | Dual General Purpose Transistors(PNP Duals) |
| BC858CDW1T1 | Dual General Purpose Transistors(PNP Duals) |
| BC857BDW1T1 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| BC858U | High Speed CMOS Logic Phase-Locked-Loop with VCO 16-SOIC -55 to 125 |
| BCD | 100mA SILICON CARTRIDGE RECTIFIERS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BC856BDW1T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual General Purpose Transistors |
| BC856BDW1T1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistors |
| BC856BDW1T1G | 功能描述:兩極晶體管 - BJT 100mA 80V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856BDW1T3 | 功能描述:兩極晶體管 - BJT SS GP XSTR PNP 65V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856BDW1T3G | 功能描述:兩極晶體管 - BJT 100mA 80V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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