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參數資料
| 型號： | BCP53-10 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 50K |
| 代理商： | BCP53-10 |
Semiconductor Components Industries, LLC, 2001
November, 2000 – Rev. 2
1
Publication Order Number:
BCP53T1/D
BCP53T1 Series
Preferred Devices
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
High Current: 1.5 Amps
NPN Complement is BCP56
The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
Device Marking:
BCP53T1 = AH
BCP53–10T1 = AH–10
BCP53–16T1 = AH–16
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–80
Vdc
Collector-Base Voltage
–100
Vdc
Emitter-Base Voltage
–5.0
Vdc
Collector Current
1.5
Adc
Total Power Dissipation
@ TA = 25
°
C (Note 1.)
Derate above 25
°
C
1.5
12
Watts
mW/
°
C
Operating and Storage
Temperature Range
TJ, Tstg
–65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
(surface mounted)
R
θ
JA
83.3
°
C/W
Lead Temperature for Soldering,
0.0625
″
from case
Time in Solder Bath
TL
260
10
°
C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Device
Package
Shipping
ORDERING INFORMATION
BCP53T1
SOT–223
http://onsemi.com
SOT–223
CASE 318E
STYLE 1
1000/Tape & Reel
MEDIUM POWER
HIGH CURRENT
SURFACE MOUNT
PNP TRANSISTORS
1
2
3
4
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 2,4
BASE
1
EMITTER 3
BCP53–10T1
SOT–223
1000/Tape & Reel
AHxxx
AHxxx = Device Code
xxx
= –10 or –16
MARKING DIAGRAM
BCP53–16T1
SOT–223
1000/Tape & Reel
相關PDF資料 |
PDF描述 |
|---|---|
| BCP53-16 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| BCP53 | Surface mount Si-Epitaxial PlanarTransistors |
| BCP56-6 | |
| BCP5410 | Obsolete - alternative part: BCP5616 |
| BCP5416 | Obsolete - alternative part: BCP5616 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCP53-10 /T3 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP53-10 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP53-10,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP53-10,135 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP53-10115 | 制造商:NXP Semiconductors 功能描述:BIPOLAR TRANSISTOR MEDIUM POWER PNP - |
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