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參數(shù)資料
| 型號： | BCP68 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 43K |
| 代理商： | BCP68 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
%
FEATURES
*
Suitable for AF drivers and output stages
*
High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE
BCP69
PARTMARKING DETAIL
BCP68
BCP68 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
25
V
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25
V
I
C
=10
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
= 30mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
μ
A
Collector Cut-Off
Current
I
CBO
100
10
nA
μ
A
V
CB
=25V
V
CB
=25V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10
μ
A
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.6
1.0
V
V
I
C
=5A, V
CE
=10V*
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
BCP68
BCP68-25
50
63
160
250
400
400
I
C
=5mA, V
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
100
MHz
I
=100mA, V
CE
=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT449 datasheet.
BCP68
C
C
E
B
3 - 19
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