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參數(shù)資料
| 型號： | BCR5KM8 |
| 英文描述： | TRIAC|400V V(DRM)|5A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 400V五（DRM）的| 5A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 129K |
| 代理商： | BCR5KM8 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Measurement point of
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
1
±
1
±
10
±
0.3
2.8
±
0.2
φ
3.2
±
0.2
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
2
±
4
±
0.75
±
0.15
3
±
3
±
6
±
E
BCR5KM
OUTLINE DRAWING
Dimensions in mm
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
G
I
T (RMS)
.................................................................. 5A
G
V
DRM
................................................................. 600V
G
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
3
G
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
1. Gate open.
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Symbol
A
A
A
2
s
W
W
V
A
°
C
°
C
g
V
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
DRM
V
DSM
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class
12
600
720
Unit
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360
°
conduction, Tc=103
°
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
T
a
=25
°
C, AC 1 minute, T
1
· T
2
· G terminal to case
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
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