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參數(shù)資料
| 型號(hào)： | BCW30L |
| 英文描述： | TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 100MA I(C) | SOT-23 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 32V的五（巴西）總裁| 100mA的一（c）| SOT - 23封裝 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 11K |
| 代理商： | BCW30L |
BCW30CSM
Bipolar PNP Device.
V
CEO
= 32V
I
C
= 0.1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
32
V
I
C(CONT)
0.1
A
h
FE
@ (V
CE
/ I
C
)
-
f
t
150M
Hz
P
D
0.35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Bipolar PNP Device in a
Hermetically sealed LCC1
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
PINOUTS
1 – Base
2 – Emitter
3 - Collector
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BCW30LR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| BCW30LT1 | 功能描述:兩極晶體管 - BJT 100mA 32V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCW30LT1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| BCW30LT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| BCW30LT1G | 功能描述:兩極晶體管 - BJT 100mA 32V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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