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參數資料
| 型號： | BCW60A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 40K |
| 代理商： | BCW60A |
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88171
09-May-02
www.vishay.com
1
New Product
Small Signal Transistors (PNP)
Features
PNP Silicon Epitaxial Planar Transistors
Suited for low level, low noise, low
frequency applications in hybrid cicuits.
Low Current, Low Voltage.
As complementary types, BCW60 Series NPN
transistors are recommended.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking
BCW61A = BA
Code:
BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13
”
reel (8mm tape), 30K/box
E9/3K per 7
”
reel (8mm tape), 30K/box
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.110 (2.8)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25
°
C ambient temperature unless otherwise specified.
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Symbol
–
V
CES
–
V
CEO
–
V
EBO
–
I
C
–
I
CM
–
I
B
P
tot
T
j
T
STG
R
θ
JA
Value
32
32
5.0
100
200
50
250
150
Unit
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C/W
–
65 to +150
500
(1)
Note:
(1) Mounted on FR-4 printed-ciruit board.
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
相關PDF資料 |
PDF描述 |
|---|---|
| BCW60B | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW60C | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW60D | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW60A | Small Signal Transistors (PNP) |
| BCW60B | Small Signal Transistors (PNP) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCW60A | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| BCW60A/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23 |
| BCW60A/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23 |
| BCW60A_D87Z | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCW60A_Q | 功能描述:兩極晶體管 - BJT NPN/ 32V/ 100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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