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參數資料
| 型號： | BCW68G |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Small Signal Transistor 330mW |
| 中文描述： | 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 89K |
| 代理商： | BCW68G |
Features
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Low Current, Low Frequency
l
Epitaxial Planar Die Construction
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Marking: DG
l
Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol Value
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
d
Unit
V
V
V
mA
mA
mA
mA
mW
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Peak Base Current
Power Dissipation@T
s
=79
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Operating & Storage Temperature
-45
-60
-5
-800
-1000
-100
-200
330
285
(1)
o
C/W
215
o
C/W
T
j
, T
STG
-55~150
o
C
Notes:
(1) Valid provided that leads are kept at
ambient temperature.
BCW68G
PNP Small
Signal Transistor
330mW
R
θ
JA
R
θ
JS
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BCW68G | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| BCW68G/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| BCW68G/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| BCW68G_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistor 330mW |
| BCW68G_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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