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參數(shù)資料
| 型號(hào)： | BCW6OALT1 |
| 英文描述： | NPN Silicon General Purpose Transistors |
| 中文描述： | NPN硅通用晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 425K |
| 代理商： | BCW6OALT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
32
Vdc
Collector–Base Voltage
32
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0)
V(BR)CEO
32
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150
°
C)
ICES
—
—
20
20
nAdc
μ
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
20
nAdc
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW60ALT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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