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參數資料
| 型號： | BCX56 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 中文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BCX56 |
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BCX56–10R1/D
BCX56-10R1
Preferred Device
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-89
package, which is designed for medium power surface mount
applications.
High Current: 1.0 Amp
Available in 7 inch/1000 unit Tape and Reel
Device Marking: BK
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
80
Vdc
Collector-Base Voltage
V
CBO
100
Vdc
Emitter-Base Voltage
V
EBO
5
Vdc
Collector Current
I
C
1
Adc
Total Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1.)
(Note 2.)
1.56
13
0.67
5.0
Watts
mW/
°
C
Watts
mW/
°
C
Operating and Storage
Temperature Range
T
J
, T
stg
–65 to 150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction-to-Ambient
(surface mounted)
R
θ
JA
(Note 1.)
(Note 2.)
80
190
°
C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
1. FR–4 @ 1.0 X 1.0 inch Pad
2. FR–4 @ Minimum Pad
Device
Package
Shipping
ORDERING INFORMATION
SOT–89
CASE 1213
STYLE 2
http://onsemi.com
MARKING DIAGRAM
BK
Y = Year Code
M = Month Code
BK= Device Code
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 2
BASE
1
EMITTER
3
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
1
2
3
BCX56–10R1
SOT–89
1000/Tape & Reel
YM
相關PDF資料 |
PDF描述 |
|---|---|
| BCX56-10-BK | SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCX56-BH | SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCX58-7 | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 |
| BCX58-9 | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 |
| BCX58VII | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCX56 /T3 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX56,115 | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX56,135 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX56 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 |
| BCX56/ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Medium Power Transistor |
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