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參數資料
| 型號： | BD241B |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 66K |
| 代理商： | BD241B |
BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BD241B
BD242B
90
80
5
3
5
1
40
2
-65 to 150
150
Unit
NPN
PNP
BD241A
BD242A
70
60
BD241C
BD242C
115
100
V
CER
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
stg
T
j
Collector-Base Voltage (R
BE
= 100
)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Total Dissipation at T
amb
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
V
A
A
A
W
W
o
C
o
C
1
2
3
TO-220
1/4
相關PDF資料 |
PDF描述 |
|---|---|
| BD242A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD242B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD242C | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD241A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD243B | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BD241BFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB |
| BD241BFP | 制造商:STMicroelectronics 功能描述: |
| BD241BFP_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD241B-S | 功能描述:兩極晶體管 - BJT 80V 3A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD241BTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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