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參數資料
| 型號： | BD2506 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 25A BOSCH TYPE PRESS-FIT DIODE |
| 中文描述： | 第25A博世型壓接二極管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 48K |
| 代理商： | BD2506 |
BD2500 – BD2506
1 of 3 2002 Won-Top Electronics
BD2500 – BD2506
25A BOSCH TYPE PRESS-FIT DIODE
Features
!
Diffused Junction
!
Low Leakage
!
Low Cost
!
High Surge Current Capability
!
Typical I
R
less than 10μA
C
Mechanical Data
D
E
!
Case: Copper Case
!
Terminals: Contact Areas Readily Solderable
!
Polarity: Cathode to Case(Reverse Units Are B
Available Upon Request and Are Designated
By An “R” Suffix, i.e. BD2502R or BD2504R)
!
Polarity: Red Color Equals Standard, A
Black Color Equals Reverse Polarity
!
Mounting Position: Any
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
BD2500 BD2501 BD2502 BD2503 BD2504 BD2505 BD2506
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
300
400
500
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
210
280
350
420
V
Average Rectified Output Current @T
A
= 150°C
I
O
25
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
400
A
Forward Voltage @I
F
= 50A
V
FM
1.18
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
500
μA
Typical Junction Capacitance (Note 1)
C
j
300
pF
Typical Thermal Resistance Junction to Case
(Note 2)
R
JC
1.2
K/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175
°C
*Glass passivated forms are available upon request
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
WTE
POWER SEMICONDUCTORS
13mm Bosch
Min
12.90
7.70
1.25
29.10
11.10
All Dimensions in mm
Dim
A
B
C
D
E
Max
13.06
8.10
1.31
31.10
11.50
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相關代理商/技術參數 |
參數描述 |
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| BD250B | 功能描述:兩極晶體管 - BJT 120W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD250B-S | 功能描述:兩極晶體管 - BJT 80V 25A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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