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參數資料
| 型號： | BD534 |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 36K |
| 代理商： | BD534 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage : BD534
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CBO
Collector Cut-off Current : BD534
* Pulse Test: PW =300
μ
s, duty Cycle =1.5% Pulsed
Parameter
Value
- 45
- 60
- 80
- 45
- 60
- 80
- 5
- 8
- 1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°
C
°
C
: BD536
: BD538
V
CEO
Collector-Emitter Voltage : BD534
: BD536
: BD538
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
Storage Temperature
Test Condition
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= -2 V, I
C
= - 500mA
V
CE
= - 5V, I
C
= - 10mA
Min.
Typ.
Max.
- 100
- 100
- 100
- 100
- 100
- 100
- 1
Units
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
: BD536
: BD538
I
CES
Collector Cut-off Current : BD534
: BD536
: BD538
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain : ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
V
CE
= - 2V, I
C
= - 2A
40
20
15
25
15
h
FE
h
FE
Groups
J
K
: ALL DEVICE
: ALL DEVICE
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
V
CE
= -2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 6A, I
B
= - 0.6A
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 500mA
30
15
40
20
75
100
V
CE
(sat)
* Collector-Emitter Saturation Voltage
- 0.8
- 0.8
V
V
V
V
BE
(on)
f
T
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
- 1.5
3
12
MHz
BD534/536/538
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD533, BD535 and BD537 respectively
1.Base 2.Collector 3.Emitter
1
TO-220
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| BD415 | Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Current, It av:4A; Holding Current:30mA; Leaded Process Compatible:Yes RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BD5340 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
| BD5340FVE | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
| BD5340FVE-TR | 功能描述:電壓監測器/監控器 CMOS DETEC VOLT 4.0V RoHS:否 制造商:Texas Instruments 監測電壓數:2 監測電壓:Adjustable 輸出類型:Open Drain 欠電壓閾值: 過電壓閾值: 準確性:1 % 工作電源電壓:1.5 V to 6.5 V 工作電源電流:1.8 uA 最大工作溫度:+ 125 C 封裝 / 箱體:SON-6 安裝風格:SMD/SMT |
| BD5340G | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
| BD5340G/FVE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
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