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參數資料
| 型號： | BD681 |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 互補性的芯片功率達林頓晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 87K |
| 代理商： | BD681 |
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARYPNP - NPN DEVICES
I
MONOLITHIC DARLINGTON
CONFIGURATION
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plasticpackage.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
BD680,
BD680A
respectively.
and
BD682
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K
R
2
Typ.= 230
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BD679/A
BD680/A
80
80
5
4
6
0.1
40
-65 to 150
150
Unit
NPN
PNP
BD677/A
BD678/A
60
60
BD681
BD682
100
100
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
V
A
A
A
W
o
C
o
C
3
21
SOT-32
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| BD680 | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BD680A | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BD682 | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BD707 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD708 | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BD681A | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON DARLINGTON POWER TRANSISTORS |
| BD681G | 功能描述:達林頓晶體管 4A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD681G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR, TO-225AA 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:750; Operating Temperature Min:-55C; Operating Temperature ;RoHS Compliant: Yes |
| BD681S | 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD681STU | 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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