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參數資料
| 型號： | BDCO5 |
| 英文描述： | 1 Watt NPN Silicon High Voltage Transistor |
| 中文描述： | 1瓦特NPN硅高壓晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | BDCO5 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
300
Vdc
Collector–Base Voltage
300
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
50
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
0.01
μ
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
10
μ
Adc
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Order this document
by BDC05/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
23
COLLECTOR
2
3
BASE
1
EMITTER
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