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參數(shù)資料
| 型號： | BDX53A |
| 廠商： | 意法半導體 |
| 英文描述： | Complemetary Silicon Power Darlington Transistors(功率達林頓晶體管) |
| 中文描述： | Complemetary硅功率達林頓晶體管（功率達林頓晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 94K |
| 代理商： | BDX53A |
BDX53A/53B/53C
BDX54B/54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
I
BDX53B, BDX53C, BDX54B AND BDX54C
ARESGS-THOMSON PREFERRED
SALESTYPES
APPLICATIONS
I
AUDIO AMPLIFIERS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53A, BDX53B and BDX53C are silicon
epitaxial-base
NPN
monolithic
Darlington
mounted in Jedec TO-220 plastic package. They
are intented for use in hammer drivers, audio
amplifiers and other medium power linear and
switching applications.
The complementary PNP types for BDX53B and
BDX53C
are
the
BDX54B
respectively.
power
configuration
transistors
in
and
are
and
BDX54C
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BDX53A
Unit
NPN
PNP
BDX53B
BDX54B
80
80
5
8
12
0.2
60
-65 to 150
150
BDX53C
BDX54C
100
100
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
60
60
V
V
V
A
A
A
W
o
C
o
C
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. =150
1/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDX77 | Medium Power Switching and Amplifier Applications |
| BD201 | Medium Power Switching and Amplifier Applications |
| BD203 | Medium Power Switching and Amplifier Applications |
| BD201 | EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
| BD203 | EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDX53A-S | 功能描述:達林頓晶體管 60V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53ATU | 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53B | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53B | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BDX53B_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
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