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參數資料
| 型號： | BDX53B |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 互補性的芯片功率達林頓晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 80K |
| 代理商： | BDX53B |
BDX53B / BDX53C
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
I
STMicroelectronicsPREFERRED
SALESTYPES
APPLICATIONS
I
AUDIO AMPLIFIERS
I
LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The
BDX53B
Epitaxial-Base
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other
medium
power
applications.
The complementary PNP types are BDX54B and
BDX54Crespectively.
and
NPN
BDX53C
power
are
silicon
transistors
in
linear
and
switching
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BDX53B
BDX54B
80
80
BDX53C
BDX54C
100
100
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
V
A
A
A
W
o
C
o
C
5
8
12
0.2
60
-65 to 150
150
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. = 150
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| BDX53C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX53C | NPN EPITAXIAL SILICON TRANSISTOR |
| BDX53B | NPN EPITAXIAL SILICON TRANSISTOR |
| BDX53F | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX54BFI | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BDX53B | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BDX53B_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
| BDX53B_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| BDX53BFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-220AB |
| BDX53BFP | 功能描述:達林頓晶體管 Silicon Pwr Trnsistr RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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