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參數資料
| 型號： | BDX67 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| 中文描述： | 16 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | BDX67 |
BDX67CECC
Bipolar NPN Device.
V
CEO
= 60V
I
C
= 16A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
60
V
I
C(CONT)
16
A
h
FE
@ 3/10 (V
CE
/ I
C
)
1000
-
f
t
7M
Hz
P
D
150
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關PDF資料 |
PDF描述 |
|---|---|
| BDX67A | RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 12V; Power: 2W; 2W Single and Dual Outputs in DIP 14; 3kVDC and 4kVDC Isolation; Optional Continuous Short Circuit Protected; Custom Solutions Available; UL94V-0 Package Material; Efficiency up to 85% |
| BDX67B | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| BDX67C | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| BDX78-SM | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:250Vrms; Voltage Rating DC, Vdc:330VDC; Peak Surge Current (8/20uS), Itm:40000A; Clamping Voltage 8/20us Max :650V; Capacitance, Cd:5000pF; Package/Case:40mm Disc |
| BDX83A | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BDX67_1 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:NPN SILICON DARLINGTONS |
| BDX67_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:NPN SILICON DARLINGTON POWER TRANSISTOR |
| BDX67A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| BDX67B | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BDX67C | 制造商:TT Electronics/ Semelab 功能描述:DARLINGTON TRANSISTOR TO-3 制造商:TT Electronics/ Semelab 功能描述:DARLINGTON TRANSISTOR, TO-3 |
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