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參數資料
| 型號： | BDY185 |
| 英文描述： | NPN Silicon Transistors. Diffused MESA |
| 中文描述： | NPN硅晶體管。漫射梅薩 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 168K |
| 代理商： | BDY185 |
COMSET SEMICONDUCTORS
1/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
60
90
140
60
100
200
Unit
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
V
CEO
Collector-Emitter Voltage
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current
6
A
I
B
Base Current
3
A
P
TOT
Power Dissipation
@ T
C
= 25°
87.5
Watts
T
J
Junction Temperature
T
Stg
Storage Temperature
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
200
-65 to +200
°C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA
相關PDF資料 |
PDF描述 |
|---|---|
| BDY23B | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3 |
| BDY24C | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BDX87C | Bipolar NPN Device |
| BDY24B | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
| BDY28C | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-204AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BDY20 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device |
| BDY23 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BDY23A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BDY23B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BDY23C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3 |
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