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參數資料
| 型號： | BF996S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N.頻道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 133K |
| 代理商： | BF996S |
BF996S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (8)
Document Number 85010
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
Integrated gate protection diodes
Low noise figure
Low feedback capacitance
High cross modulation performance
Low input capacitance
High AGC-range
13 579
2
1
4
3
94 9279
BF996S Marking: MH
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
V
DS
I
D
±
I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
Unit
V
mA
mA
mW
C
C
T
amb
≤
60 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
相關PDF資料 |
PDF描述 |
|---|---|
| BF996SB | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BF996S T/R | 功能描述:MOSFET TAPE7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BF996S,215 | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF996S,215-CUT TAPE | 制造商:NXP 功能描述:BF996S Series 20 V 30 mA N-channel Dual-gate MOS-FET - SOT143B |
| BF996SA | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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