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參數資料
| 型號： | BFC40 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
| 中文描述： | 2 A, 1500 V, 11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 12K |
| 代理商： | BFC40 |
BFC40
LA B
S E M E
Prelim. 2/96
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukCharacteristic
Drain – Source Breakdown Voltage
Drain – Source On State Resistance
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
Cutoff Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Diode Forward Voltage
Forward Transfer Admittance
Test Conditions
V
GS
= 0V , I
D
= 1mA
V
GS
=10V , I
D
= 1A
V
DS
= 1200V , V
GS
= 0V
V
GS
= ±20V , V
DS
= 0V
V
DS
= 10V , I
D
= 1.0mA
Min.
1500
Typ.
Max.
Unit
V
BV
DSS
R
DS(ON)
I
DSS
I
GSS
V
GS(off)
C
iss
C
oss
C
rss
t
on
t
off
V
SD
|Y
FS
|
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
TO247–AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate – Source Voltage
Total Power Dissipation
Operating and Storage Junction Temperature Range
V
DS
= 20V
f = 1MHz
V
GS
= 10V
I
D
= 1A
V
GS
= 0 , I
S
= 2A
V
DS
= 20V , I
D
= 1A
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
1500
2
4
±20
50
–55 to +150
V
A
A
V
W
°C
8.0
11.0
100
±100
3.5
1.5
550
90
30
30
200
1.0
1.5
1.5
1.0
W
m
A
nA
V
pF
ns
V
S
ABSOLUTE MAXIMUM RATINGS
(T
AMB
= 25°C unless otherwise stated)
ELECTRICAL CHARACTERISTICS
(T
AMB
= 25°C unless otherwise stated)
V
DSS
I
D(cont)
R
DS(on)
1500V
2A
8.00
W
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
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