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參數資料
| 型號： | BFN23 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | MS3126E14-19P |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數： | 1/2頁 |
| 文件大小： | 161K |
| 代理商： | BFN23 |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
12
01.11.2003
BFN 23
High Voltage Transistors
PNP
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
PNP
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25 C)
Grenzwerte
(T
A
= 25 C)
BFN 23
250 V
250 V
250 V
5 V
250 mW
1
)
50 mA
100 mA
150 C
- 65…+ 150 C
Collector-Emitter-voltage
Collector-Base-voltage
Collector-Emitter-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
R
BE
= 2.7 k
C open
- V
CE0
- V
CB0
- V
CER
- V
EB0
P
tot
- I
C
- I
CM
T
j
T
S
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 200 V
I
E
= 0, - V
CB
= 200 V, T
j
= 150 C
Collector-Base cutoff current – Kollektorreststrom
- V
CB
= 250 V, R
BE
= 2.7 k
- V
CB
= 250 V, R
BE
= 2.7 k , T
j
= 150 C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
- I
CB0
- I
CB0
–
–
–
–
100 nA
20 A
- I
CBR
- I
CBR
–
–
–
–
1 A
50 A
- I
EB0
–
–
10 A
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