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參數(shù)資料
| 型號(hào)： | BFR182TW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | MS3126E20-16SY |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 68K |
| 代理商： | BFR182TW |
BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99
1 (4)
Document Number 85025
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
Low noise figure
High power gain
13 581
2
3
1
94 9280
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
15
10
2
35
5
200
150
Unit
V
V
V
mA
mA
mW
C
C
T
amb
≤
60 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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