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參數資料
| 型號： | BFR280TW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 68K |
| 代理商： | BFR280TW |
BFR280T/BFR280TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99
1 (4)
Document Number 85027
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 8 mA.
Features
Low power applications
Low noise figure
High transition frequency
13 581
2
3
1
94 9280
BFR280T Marking: RE
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
BFR280TW Marking: WRE
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
15
8
2
10
80
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
114 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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