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參數(shù)資料
| 型號(hào)： | BGA427 |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 100 MHz - 1800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 163K |
| 代理商： | BGA427 |
2007-07-12
1
BGA427
in SIEGET
25-Technologie
Si-MMIC-Amplifier
1
2
3
4
Cascadable 50
-gain block
Unconditionally stable
Gain |
S
21
|
2
= 18.5 dB at 1.8 GHz (Appl.1)
gain |
S
21
|
2
= 22 dB at 1.8 GHz (Appl.2)
I
P
3out
= +7 dBm at 1.8 GHz (
V
D
=3V,
I
D
=9.4mA)
Noise figure
NF
= 2.2 dB at 1.8 GHz
Typical device voltage
V
D
= 2 V to 5 V
Reverse isolation
>
35 dB (Appl.2)
Pb-free (RoHS compliant) package
1)
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
Pin Configuration
2, GND 3, +V
Package
1, IN
4, Out
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
I
D
V
D
,+V
P
tot
25
mA
Device voltage
6
V
Total power dissipation
T
S
= 120 °C
RF input power
Junction temperature
150
mW
P
RFin
T
j
T
A
T
stg
-10
150
dBm
°C
Ambient temperature range
-65 ... 150
Storage temperature range
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
≤
295
K/W
1
Pb-containing package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BGA427_07 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Si-MMIC-Amplifier in SIEGET 25-Technologie |
| BGA427E6327 | 制造商:INFNON 功能描述: |
| BGA427E-6327 | 制造商:Siemens 功能描述: |
| BGA427E6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:IC RF CASCADE AMP SOT-343 |
| BGA427E6327T | 制造商:Infineon Technologies AG 功能描述:SIEGET MMIC SOT343 3K T&R |
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