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參數資料
| 型號： | BLC6G22-130 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT895-1, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 52K |
| 代理商： | BLC6G22-130 |
1.
Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
N
Output power = 25 W (AV)
N
Gain = 18 dB
N
Efficiency = 32 %
N
IMD3 =
37 dBc
N
ACPR =
40 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (2000 MHz to 2200 MHz)
I
Internally matched for ease of use
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
f
V
DS
(MHz)
(V)
2-carrier W-CDMA
2110 to 2170
28
Typical performance
P
L(AV)
(W)
25
G
p
(dB)
18
η
D
(%)
32
IMD3
(dBc)
37
[1]
ACPR
(dBc)
40
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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