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參數資料
| 型號： | BLF4G20LS-110B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 108K |
| 代理商： | BLF4G20LS-110B |
1.
Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth.
ACPR
600
at 30 kHz resolution bandwidth.
[2]
1.2 Features
I
Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 650 mA:
N
Load power = 48 W (AV)
N
Gain = 13.8 dB (typ)
N
Efficiency = 38.5 % (typ)
N
ACPR
400
=
61 dBc (typ)
N
ACPR
600
=
74 dBc (typ)
N
EVM
rms
= 2.1 % (typ)
I
Easy power control
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
BLF4G20LS-110B
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
Table 1:
f = 1930 MHz to 1990 MHz; T
case
= 25
°
C; I
Dq
= 650 mA; unless otherwise specified; in a class-AB
production test circuit; typical values
Mode of operation
V
DS
(V)
(W)
(dB)
CW
28
100
13.4
GSM EDGE
28
48 (AV)
13.8
Typical performance
P
L
G
p
η
D
(%)
49
38.5
ACPR
400
(dBc)
-
61
[1]
ACPR
600
(dBc)
-
74
[2]
EVM
rms
(%)
-
2.1
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20S-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B |
| BLF4G20S-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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