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參數資料
| 型號： | BLF4G22-100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 82K |
| 代理商： | BLF4G22-100 |
1.
Product prole
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1]
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
1.2 Features
s Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
900 mA:
x Load power = 25 W (AV)
x Gain = 13.5 dB (typ)
x Efciency = 26 % (typ)
x ACPR =
41 dBc (typ)
x IMD3 =
37 dBc (typ)
s Easy power control
s Integrated ESD protection
s Excellent ruggedness > 10 : 1 VSWR at 100 W CW
s High efciency
s High peak power capability (> 150 W)
s Excellent thermal stability
s Designed for broadband operation (2000 MHz to 2200 MHz)
s Internally matched for ease of use
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
Table 1:
Typical performance
Tcase =25 °C; in a common source class-AB test circuit; IDq = 900 mA; typical values
Mode of operation f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
IMD3
(dBc)
ACPR
(dBc)
2-carrier
W-CDMA [1]
f1 = 2135; f2 = 2145
28
25 (AV) 13.5
26
37
41
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
相關PDF資料 |
PDF描述 |
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| BLF4G22S-100 | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
| BLF4G22-130 | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB |
| BLF4G22LS-130 | UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB |
| BLF6G10LS-200R | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BLF4G22-100,112 | 制造商:NXP Semiconductors 功能描述: |
| BLF4G22-130 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF4G22-45,112 | 制造商:NXP Semiconductors 功能描述: |
| BLF4G22LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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