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參數資料
| 型號： | BLF6G20-180P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-2 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 49K |
| 代理商： | BLF6G20-180P |
1.
Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an I
Dq
of 1600 mA:
N
Average output power = 50 W
N
Power gain = 17.5 dB (typ)
N
Efficiency = 27.5 %
N
ACPR =
35 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
1.3 Applications
I
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
f
(MHz)
2-carrier W-CDMA
1805 to 1880
Typical performance
V
DS
(V)
32
P
L(AV)
(W)
50
G
p
(dB)
17.5
η
D
(%)
27.5
ACPR
(dBc)
35
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關代理商/技術參數 |
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|---|---|
| BLF6G20-180PN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor |
| BLF6G20-180PN,112 | 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 65V 5-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G20-180RN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor |
| BLF6G20-180RN,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G20-230P | 功能描述:IC BASESTATION FINAL SOT502A RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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