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參數資料
| 型號： | BM100-28 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 16K |
| 代理商： | BM100-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
33
UNITS
V
V
V
---
65
4.0
10
C
CB
V
VB
= 28 V
f = 1.0 MHz
200
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 100 W f = 175 MHz
8.5
60
dB
%
NPN SILICON RF POWER TRANSISTOR
BM100-28
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE 3&4 = EMITTER
DESCRIPTION:
The
ASI BM100-28
is Designed for high
power VHF Applications up to 200 MHz.
FEATURES:
Common Emitter
P
G
= 8.5 dB at 20 W/175 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
20 A
V
CEO
33 V
V
CES
65 V
V
EBO
4.0 V
P
DISS
270 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.65
O
C/W
T
J
T
STG
θ
JC
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