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參數(shù)資料
型號(hào): BPV10
廠商: VISHAY SEMICONDUCTORS
元件分類: 光敏二極管
英文描述: Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2
中文描述: Photodiodes 10V 215mW 875nm
文件頁數(shù): 1/5頁
文件大小: 97K
代理商: BPV10
BPV10
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 22-Nov-11
1
Document Number: 81502
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
BPV10 is a PIN photodiode with high speed and high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Radiant sensitive area (in mm
2
): 0.78
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
High bandwidth: 250 MHz at V
R
= 12 V
Fast response times
Angle of half sensitivity:
= ± 20°
Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
High speed photo detector
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
BPV10
I
ra
(μA)
70
(deg)
± 20
λ
0.1
(nm)
380 to 1100
ORDERING INFORMATION
ORDERING CODE
BPV10
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
T
amb
25 °C
t
5 s, 2 mm from body
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